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ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2.229910052721 tungsten Inorganic materials 0.000 description 4.WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4.TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 4.238000009792 diffusion process Methods 0.000 description 4.239000003989 dielectric material Substances 0.000 description 4.229910000990 Ni alloy Inorganic materials 0.000 description 4.229910000640 Fe alloy Inorganic materials 0.000 description 4.229910052717 sulfur Inorganic materials 0.000 description 6.NINIDFKCEFEMDL-UHFFFAOYSA-N sulfur Chemical compound NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6.238000005755 formation reaction Methods 0.000 description 6.230000015572 biosynthetic process Effects 0.000 description 6.229910052751 metal Inorganic materials 0.000 description 8.229910052698 phosphorus Inorganic materials 0.000 description 14.OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14.230000001276 controlling effect Effects 0.000 abstract description 4.238000004519 manufacturing process Methods 0.000 abstract description 12.238000009377 nuclear transmutation Methods 0.000 abstract description 14.239000000463 material Substances 0.000 abstract description 20.150000002500 ions Chemical class 0.000 abstract description 24.229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16.XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44.229910052710 silicon Inorganic materials 0.000 claims description 50.230000015556 catabolic process Effects 0.000 title claims abstract description 22.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Industrial Technology Research Institute ITRI filed Critical Industrial Technology Research Institute ITRI Priority to US09/713,803 priority Critical patent/US6359309B1/en Application granted granted Critical Publication of US6359309B1 publication Critical patent/US6359309B1/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links Original Assignee Industrial Technology Research Institute ITRI Priority date (The priority date is an assumption and is not a legal conclusion. Industrial Technology Research Institute ITRI
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Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US09/713,803 Inventor Chungpin Liao Dar-Chang Juang Current Assignee (The listed assignees may be inaccurate.
#Igfet transistor power transistor pdf#
Google Patents Power MOSFET and IGBT with optimized on-resistance and breakdown voltageĭownload PDF Info Publication number US6359309B1 US6359309B1 US09/713,803 US71380300A US6359309B1 US 6359309 B1 US6359309 B1 US 6359309B1 US 71380300 A US71380300 A US 71380300A US 6359309 B1 US6359309 B1 US 6359309B1 Authority US United States Prior art keywords region layer gate silicon igbt Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6359309B1 - Power MOSFET and IGBT with optimized on-resistance and breakdown voltage US6359309B1 - Power MOSFET and IGBT with optimized on-resistance and breakdown voltage
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